Electrical characteristics of temperature-difference liquid phase deposited SiO2 on GaN with (NH4)2Sx treatment

被引：3

作者：

Lee, Ming-Kwei ^{[1
]}

Ho, Chen-Lin ^{[1
]}

Zeng, Jia-Yi ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2008年 / 205卷 / 11期

关键词：

D O I：

10.1002/pssa.200723627

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The characteristics of a SiO(2) film grown on (NH(4))(2)S(x) treated GaN by temperature-difference liquid phase deposition were investigated. Hydrofluorosilicic acid and boric acid were used as deposition solutions. For GaN without the (NH(4))(2)S(x) treatment, an Al/SiO(2)/GaN MOS diode shows poor electrical characteristics due to the native oxides existing at the interface. With (NH(4))(2)S(x) treatment of GaN, a stable sulfide-terminated surface is obtained and the leakage current density of SiO(2)/GaN is improved from 6.15 x 10(-4) A/cm(2) to 2.08 x 10(-5) A/cm(2) at the electric field of 2 MV/cm. The effective oxide charges decrease from 6.09 x 10(11) C/cm(2) to 2.23 x 10(11) C/cm(2). (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2679 / 2682

页数：4

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