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Temperature dependence of the electrical properties in MnO-modified BiFeO3 thin films
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作者:

Lee, M. H.
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Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea

Park, J. S.
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Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea

Kim, D. J.
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Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea

Do, D.
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Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea

Kim, M. -H.
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Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea

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Kim, S. W.
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Changwon Natl Univ, Dept Phys, Chang Won 641773, South Korea Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea

Kim, W. J.
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Changwon Natl Univ, Dept Phys, Chang Won 641773, South Korea Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea
机构:
[1] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea
[2] Changwon Natl Univ, Dept Phys, Chang Won 641773, South Korea
基金:
新加坡国家研究基金会;
关键词:
Ferroelectric;
BiFeO3;
Leakage current;
MnO;
FERROELECTRIC PROPERTIES;
LEAKAGE CURRENT;
POLARIZATION;
D O I:
10.3938/jkps.62.1073
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
MnO-modified Bi1.05FeO3 (BFO) thin films were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by using a pulsed laser deposition technique. The temperature-dependent ferroelectric and leakage current properties were investigated for 5% or 10% MnO-modified BFO thin films. The 5% MnO-modified BFO thin film exhibited a large remnant polarization and a low leakage current under a high electric field and in high temperature ranges. On the other hand, 10% MnO-modified BFO thin film showed a leaky ferroelectric nature at elevated temperatures with a sharp increase in the leakage current, due to the high density of defects.
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页码:1073 / 1076
页数:4
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