Temperature dependence of the electrical properties in MnO-modified BiFeO3 thin films

被引:1
作者
Lee, M. H. [1 ]
Park, J. S. [1 ]
Kim, D. J. [1 ]
Do, D. [1 ]
Kim, M. -H. [1 ]
Song, T. K. [1 ]
Choi, H. I. [2 ]
Kim, S. W. [2 ]
Kim, W. J. [2 ]
机构
[1] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea
[2] Changwon Natl Univ, Dept Phys, Chang Won 641773, South Korea
基金
新加坡国家研究基金会;
关键词
Ferroelectric; BiFeO3; Leakage current; MnO; FERROELECTRIC PROPERTIES; LEAKAGE CURRENT; POLARIZATION;
D O I
10.3938/jkps.62.1073
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
MnO-modified Bi1.05FeO3 (BFO) thin films were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by using a pulsed laser deposition technique. The temperature-dependent ferroelectric and leakage current properties were investigated for 5% or 10% MnO-modified BFO thin films. The 5% MnO-modified BFO thin film exhibited a large remnant polarization and a low leakage current under a high electric field and in high temperature ranges. On the other hand, 10% MnO-modified BFO thin film showed a leaky ferroelectric nature at elevated temperatures with a sharp increase in the leakage current, due to the high density of defects.
引用
收藏
页码:1073 / 1076
页数:4
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