Performance of a Digital Gamma-Imaging System Based Upon CdTe-CMOS Sensor and 75 Se Source for Nondestructive Testing

被引:8
作者
Cho, H. S. [1 ]
Lee, S. Y. [1 ]
Choi, S. I. [1 ]
Oh, J. E. [1 ]
Cho, H. M. [1 ]
Kim, K. Y. [1 ]
Lee, B. S. [2 ]
Kim, S. [3 ]
机构
[1] Yonsei Univ, Dept Radiol Sci, Wonju 220710, South Korea
[2] Konkuk Univ, Sch Biomed Engn, Chungju 380701, South Korea
[3] Cheju Natl Univ, Dept Nucl & Energy Engn, Cheju 690756, South Korea
关键词
CdTe photodetector; digital gamma imaging; nondestructive testing; (75) Se source;
D O I
10.1109/TNS.2008.2003356
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As a continuation of our digital radiographic sensor R&D, we have developed a digital gamma-imaging system based upon the commercially-available CdTe-CMOS sensor (AJAT, SCAN1000) and the (75) Se gamma source (MDS, Gamma Mat (R) SE) for our ongoing application of nondestructive testing. Here the sensor has a 750-mu m-thick CdTe photoconductor as an efficient radiation converter and a CMOS pixel array having 100 x 100 mu m(2) pixel size and 5.4 x 151.0 mm(2) active area, bump-bonded to the photoconductor for signal readout. The source has about 62.8 Ci activity and a physical size of 3.0 mm in diameter. For the first time in this project, we have succeeded in obtaining useful gamma images from the imaging system and evaluated the imaging performance in terms of the resolving power, the line spread function (LSF), the modulation transfer function (MTF), the noise power spectrum (NPS), and the detective quantum efficiency (DQE). For comparison, we also evaluated the image quality by using a microfocus X-ray source (Hamamatsu, L9121-01) having a focal spot size of about 5 mu m.
引用
收藏
页码:2716 / 2720
页数:5
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