Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

被引：24

作者：

Zhang, Hongliang ^{[1
]}

Wan, Qing ^{[1
]}

Wan, Changjin ^{[1
]}

Wu, Guodong ^{[1
]}

Zhu, Liqiang ^{[1
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 05期

基金：

中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTORS; GATE; TEMPERATURE;

D O I：

10.1063/1.4791673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tungsten oxide (WOx) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 x 10(-4) S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WOx-based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 x 10(6), a low subthreshold swing of 108mV/decade, and a high field-effect mobility 42.6 cm(2)/V s was realized. Our results demonstrated that WOx-based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791673]

引用

页数：4

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