Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

Tungsten oxide (WOx) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 x 10(-4) S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WOx-based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 x 10(6), a low subthreshold swing of 108mV/decade, and a high field-effect mobility 42.6 cm(2)/V s was realized. Our results demonstrated that WOx-based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791673]