Electrical and optical properties of single zigzag SnO2 nanobelts

被引：29

作者：

Butt, Faheem K. ^{[1
]}

Cao, Chuanbao ^{[1
]}

Khan, Waheed S. ^{[1
]}

Safdar, Muhammad ^{[2
]}

Fu, Xuewen ^{[3
,4
]}

Tahir, Muhammad ^{[1
]}

Idrees, Faryal ^{[1
]}

Ali, Zulfiqar ^{[1
]}

Nabi, Ghulam ^{[1
]}

Yu, Dapeng ^{[3
,4
]}

机构：

[1] Beijing Inst Technol, Res Ctr Mat Sci, Beijing 100081, Peoples R China

[2] Chinese Acad Sci, Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China

[3] Peking Univ, Dept Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[4] Peking Univ, Dept Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China

来源：

CRYSTENGCOMM | 2013年 / 15卷 / 11期

基金：

中国国家自然科学基金; 高等学校博士学科点专项科研基金;

关键词：

STANNIC OXIDE; STRUCTURAL-CHARACTERIZATION; NANOCRYSTALLINE SNO2; LATTICE-DYNAMICS; RUTILE STRUCTURE; LARGE-SCALE; NANOWIRE; GROWTH; CRYSTALLINE; DEFECT;

D O I：

10.1039/c2ce26728d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report here on investigations of electrical and optical properties of single zigzag SnO2 nanobelts. Large scale zigzag nanobelts were obtained on a silicon substrate by a Chemical Vapor Deposition (CVD) approach. The average value of carrier concentrations (N-d) and electron mobility (mu) were calculated to be 1.39 x 10(18) cm(-3) and 70.76 cm(2) V-1 s(-1), respectively. Room temperature PL exhibits a broad emission peak centred at 600 nm. Three Raman active modes at 474.8, 633.8, 775.8 cm(-1) were observed. Electron paramagnetic resonance measurements suggest the presence of many singly ionized states.

引用

页码：2106 / 2112

页数：7

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