Resistive switching in reactive cosputtered MFe2O4 (M=Co, Ni) films

被引：25
|
作者：
Jin, C. [1 ]
Zheng, D. X. [1 ]
Li, P. [1 ]
Mi, W. B. [1 ]
Bai, H. L. [1 ]
机构：
[1] Tianjin Univ, Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2012年 / 263卷
基金：
美国国家科学基金会;
关键词：
Resistive switching; Reactive cosputtering; Oxygen vacancy; Conductive path; THIN-FILMS; MEMORY;
D O I：
10.1016/j.apsusc.2012.09.135
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Resistive switching (RS) characteristics of the spinel oxides MFe2O4 ( M = Co, Ni) have been investigated. The current-voltage curves show hysteresis loops that are suitable for RS devices at room temperature. We have demonstrated that the oxygen vacancies determine the path of electrical conduction in the MFe2O4 films. The drift of the oxygen vacancies from high-density region to low-density one makes the conductive path formed between the electrodes. The RS effect can be attributed to the formation and rupture of the conductive path under the positive and negative bias. Our results provide the evidence that the spinel oxides, MFe2O4, have potential applications in resistive switching random access memories. (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码：678 / 681
页数：4
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