Continuous Electron Doping of Single-Walled Carbon Nanotube Films Using Inkjet Technique
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作者:
Matsuzaki, Satoki
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Waseda Univ, Grad Sch Adv Sci & Engn, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, JapanWaseda Univ, Grad Sch Adv Sci & Engn, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan
Matsuzaki, Satoki
[1
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Nobusa, Yuki
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Waseda Univ, Grad Sch Adv Sci & Engn, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, JapanWaseda Univ, Grad Sch Adv Sci & Engn, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan
Nobusa, Yuki
[1
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Shimizu, Ryo
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Waseda Univ, Grad Sch Adv Sci & Engn, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, JapanWaseda Univ, Grad Sch Adv Sci & Engn, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan
Shimizu, Ryo
[1
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Yanagi, Kazuhiro
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Tokyo Metropolitan Univ, Dept Phys, Hachioji, Tokyo 1920397, JapanWaseda Univ, Grad Sch Adv Sci & Engn, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan
Yanagi, Kazuhiro
[2
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Kataura, Hiromichi
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Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, JapanWaseda Univ, Grad Sch Adv Sci & Engn, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan
Kataura, Hiromichi
[3
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Takenobu, Taishi
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Waseda Univ, Grad Sch Adv Sci & Engn, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, JapanWaseda Univ, Grad Sch Adv Sci & Engn, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan
Takenobu, Taishi
[1
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机构:
[1] Waseda Univ, Grad Sch Adv Sci & Engn, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan
[2] Tokyo Metropolitan Univ, Dept Phys, Hachioji, Tokyo 1920397, Japan
[3] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan
The fabrication of logic circuits using the inkjet technique has attracted especially strong interest owing to wide range applications such as flexible and printed electronics. Although logic circuits fabricated using the inkjet method have already been accomplished, the precise control of gate threshold voltages has not been realized yet. In this study, we have demonstrated electron doping of single-walled carbon nanotube (SWCNT) films by inkjet printing of dilute poly(ethylene imine) (PEI) ink. We have successfully obtained the continuous threshold voltage shift by varying the number of doping steps, indicating that the carrier concentration in PEI ink is much lower than that of our previous work. (C) 2012 The Japan Society of Applied Physics
机构:
Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Manivannan, S.
Jeong, Il Ok
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Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Jeong, Il Ok
Ryu, Je Hwang
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Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Ryu, Je Hwang
Lee, Chang Seok
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Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Lee, Chang Seok
Jang, Jin
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Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Jang, Jin
Park, Kyu Chang
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Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Park, Kyu Chang
Kim, Ki Seo
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Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
Kyung Hee Univ, Dept Phys, Seoul 130701, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea