Improved semiconductor-laser dynamics from induced population pulsation

被引：46
作者：
Wieczorek, Sebastian
Chow, Weng W.
Chrostowski, Lukas
Chang-Hasnain, Connie J.
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
[2] Univ British Columbia, Vancouver, BC V6T 1Z4, Canada
[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2006年 / 42卷 / 5-6期
关键词：
injection locking; modulation bandwidth; modulation response; population pulsation; relaxation oscillation; semiconductor lasers;
D O I：
10.1109/JQE.2006.874753
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper investigates theoretically the modification of dynamical properties in a semiconductor laser by a strong injected signal. It is found that enhanced relaxation oscillations are governed by the pulsations of the intracavity field and population at frequencies determined by the injected field and cavity resonances. Furthermore, the. bandwidth enhancement is associated with the undamping of the injection-induced relaxation oscillation and strong population pulsation effects. There are two limitations to the modulation-bandwidth enhancement: Overdamping of relaxation oscillation and degradation of flat response at low frequencies. The injected-laser rate-equations used in the investigation reproduce the relevant aspects of modulation-bandwidth enhancement found in the experiment on injection-locked vertical-cavity surface-emitting lasers.
引用
收藏
页码：552 / 562
页数：11
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