Interface states of AlSb/InAs heterointerface with AlAs-like interface

被引：2
|
作者：
Gozu, S
Akahane, K
Yamamoto, N
Ueta, A
Ando, T
Ohtani, N
机构：
[1] Natl Inst Informat & Commun Technol, Basic & Adv Res Div, Koganei, Tokyo 1848795, Japan
[2] Hamamatsu Photon KK, Cent Res Lab, Shizuoka 4348601, Japan
[3] Doshisha Univ, Kyoto 6100321, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4B期
关键词：
interface states; AlAs-like interface; InSb-like interface; Tamm state; InAs; AlSb; multiple quantum wells;
D O I：
10.1143/JJAP.45.3544
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the interface states (IFSs) of AlSb/InAs multiple quantum wells (MQWs) with an AlAs-like interface. The MQWs Were grown by molecular beam epitaxy (MBE) using a proper shutter sequence at their interface to control the AlAs-like interface. The MQWs were evaluated by x-ray diffraction, photoluminescence, Hall and absorption measurements. These measurements revealed that IFSs at the AlAs-like interface originate from anticite As defects at the interface.
引用
收藏
页码：3544 / 3547
页数：4
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