We show that the various techniques commonly used to measure the linewidth enhancement factor can lead to different values when applied to quantum dot semiconductor lasers. Such behaviour is a direct consequence of the intrinsic capture/escape dynamics of quantum dot materials and of the free carrier plasma effects. This provides an explanation for the wide range of values experimentally measured and the linewidth re-broadening recently measured. (c) 2006 Optical Society of America.
机构:
Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USAUniv Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
Mi, Z
;
Bhattacharya, P
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Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USAUniv Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
Bhattacharya, P
;
Fathpour, S
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Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USAUniv Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
机构:
Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USAUniv Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
Mi, Z
;
Bhattacharya, P
论文数: 0引用数: 0
h-index: 0
机构:
Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USAUniv Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
Bhattacharya, P
;
Fathpour, S
论文数: 0引用数: 0
h-index: 0
机构:
Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USAUniv Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA