Near-infrared photoactive Cu2ZnSnS4 thin films by co-sputtering

被引：34

作者：

Banavoth, Murali ^{[1
]}

Dias, Sandra ^{[1
]}

Krupanidhi, S. B. ^{[1
]}

机构：

[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India

来源：

AIP ADVANCES | 2013年 / 3卷 / 08期

关键词：

OPTICAL-PROPERTIES;

D O I：

10.1063/1.4820377

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The thin films of Cu2ZnSnS4 (CZTS) were grown by co-sputtering further the structural, optical and electrical properties were analyzed and confirmed the CZTS phase formation. The photo response of CZTS in near IR photodectection has been demonstrated. The detector response was measured employing both the IR lamp and IR laser illuminations. The calculated growth and decay constants were 130 m sec and 700 m sec followed by the slower components upon lamp illumination. The external quantum efficiency of 15%, responsivity of 13 AW(-1) makes CZTS a suitable candidate for the IR photodectection. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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页数：6

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