Fabrication of metal nanoparticles as catalyst at low temperature and growth of silicon nanostructures

被引：3

作者：

Jeon, Minsung ^{[1
]}

Tomitsuka, Yoshihiro ^{[1
]}

Maishigi, Kazuya ^{[1
]}

Uchiyama, Hisashi ^{[1
]}

Aoyagi, Minoru ^{[2
]}

Kamisako, Koichi ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Elect & Informat Engn Dept, Koganei, Tokyo 1848588, Japan

[2] Nippon Inst Technol, Dept Elect & Elect Engn, Miyashiro, Saitama 3458501, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2008年 / 5卷 / 16期

关键词：

hydrogen radicals; nanoparticles; catalyst; metal oxide film;

D O I：

10.1587/elex.5.586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We firstly investigated the effect of hydrogen radical treatment to fabricate metal nanoparticles as catalyst, which is used for synthesizing one dimensional nanostructure, from metal oxide film at low temperature as 200 degrees C. The metal nanoparticles with spherical shape were successfully fabricated after hydrogen radical treatment. Their surface shapes were clearly changed with increasing the hydrogen radical treatment time at same temperature. In addition, silicon nanostructures after fabrication of metal nanoparticles were grown at varied temperatures. The ball- and wire-like silicon nanostructures at 200 degrees C and 400 degrees C were synthesized, respectively. Their structure depends strongly on the growth temperature.

引用

页码：586 / 591

页数：6

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