Indium tin oxide transparent electrodes for broad-area top-emitting vertical-cavity lasers fabricated using a single lithography step

被引：28

作者：

Chua, CL

Thornton, RL

Treat, DW

Yang, VK

Dunnrowicz, CC

机构：

[1] Xerox Palo Alto Research Center, Palo Alto

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 05期

关键词：

contacts; electrode; indium tin oxide; oxide aperture; semiconductor lasers; surface-emitting lasers;

D O I：

10.1109/68.588090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report for the first time top emitting buried oxide vertical cavity lasers using transparent indium tin oxide electrodes, Our process enables broad-area VCSEL's to be fabricated in a single lithography step, thus allowing the fast turn-around time necessary for evaluating VCSEL epitaxial materials. The ITO contacts attain a peak transmission of 96%, a specific contact resistance of 10(-5) Omega . cm(2), and a sheet resistivity of 2.5x10(-4) Omega . cm. Under room temperature CW pumping, the devices exhibit a minimum threshold current density of 1.2 kA/cm(2) at a wavelength of 801 nm, and have a maximum light output power of 5.2 mW.

引用

页码：551 / 553

页数：3

共 5 条

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