Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt

被引:27
|
作者
Yoon, Kyung Jean [1 ]
Song, Seul Ji
Seok, Jun Yeong
Yoon, Jung Ho
Kim, Gun Hwan
Lee, Jong Ho
Hwang, Cheol Seong
机构
[1] Seoul Natl Univ, Dept Mat Sci & Engn, WCU Hybrid Mat Program, Seoul 151744, South Korea
基金
新加坡国家研究基金会;
关键词
D O I
10.1088/0957-4484/24/14/145201
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Various types of bipolar resistive switching (BRS) at the filament ruptured region by the unipolar resistive switching (URS) reset in the structure Pt/TiO2/Pt were categorized in terms of operation polarity and switching parameters. The differences in BRS behavior, even under identical current-voltage switching, are closely related to the previously performed URS reset parameter, especially the power consumed during the reset process. Various modes of BRS from the URS reset status in the structure Pt/TiO2/Pt are reported, and interpreted in terms of a distinct oxygen vacancy configuration in the ruptured region of a Magneli filament.
引用
收藏
页数:8
相关论文
共 50 条
  • [1] Coexistence of bipolar and unipolar resistive switching behaviors in a Pt/TiO2/Pt stack
    Jeong, Doo Seok
    Schroeder, Herbert
    Waser, Rainer
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (08) : G51 - G53
  • [2] Mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell
    Jeong, Doo Seok
    Schroeder, Herbert
    Waser, Rainer
    PHYSICAL REVIEW B, 2009, 79 (19):
  • [3] Coexistence of unipolar and bipolar resistive switching in Pt/NiO/Pt
    Choi, Dooho
    Kim, Chang Soo
    APPLIED PHYSICS LETTERS, 2014, 104 (19)
  • [4] Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures
    Kim, Kyung Min
    Kim, Gun Hwan
    Song, Seul Ji
    Seok, Jun Yeong
    Lee, Min Hwan
    Yoon, Jeong Ho
    Hwang, Cheol Seong
    NANOTECHNOLOGY, 2010, 21 (30)
  • [5] BIPOLAR RESISTIVE SWITCHING IN Au/TiO2/Pt THIN FILM STRUCTURES
    Yarmarkin, V. K.
    Shulman, S. G.
    Lemanov, V. V.
    INTEGRATED FERROELECTRICS, 2008, 100 : 274 - 284
  • [6] Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices
    Ho, Patrick W. C.
    Hatem, Firas Odai
    Almurib, Haider Abbas F.
    Kumar, T. Nandha
    JOURNAL OF SEMICONDUCTORS, 2016, 37 (06)
  • [7] Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices
    Patrick W.C.Ho
    Firas Odai Hatem
    Haider Abbas F.Almurib
    T.Nandha Kumar
    Journal of Semiconductors, 2016, (06) : 43 - 55
  • [8] Characteristic electroforming behavior in Pt/ TiO2 /Pt resistive switching cells depending on atmosphere
    Jeong, Doo Seok
    Schroeder, Herbert
    Breuer, Uwe
    Waser, Rainer
    Journal of Applied Physics, 2008, 104 (12):
  • [9] Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere
    Jeong, Doo Seok
    Schroeder, Herbert
    Breuer, Uwe
    Waser, Rainer
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (12)
  • [10] Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure
    Wei, Guobin
    Goto, Yuta
    Ohta, Akio
    Makihara, Katsunori
    Murakami, Hideki
    Higashi, Seiichiro
    Miyazaki, Seiichi
    IEICE TRANSACTIONS ON ELECTRONICS, 2011, E94C (05): : 699 - 704