A low cost n-SiCN/p-SiCN homojunction for high temperature and high gain ultraviolet detecting applications

被引：21
作者：
Chou, Tse-Heng [1 ]
Fang, Yean-Kuen [1 ]
Chiang, Yen-Ting [1 ]
Lin, Cheng-I [1 ]
Yang, Che-Yun [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, VLSI Technol Lab, Tainan 701, Taiwan
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2008年 / 147卷 / 01期
关键词：
homojunction; detector; UV; SiCN; RTCVD;
D O I：
10.1016/j.sna.2008.03.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel n-SiCN/p-SiCN homojunction was developed on Si Substrate for low cost and high temperature ultraviolet(UV) detecting applications. The current ratio of the junction under -5V bias, with and without irradiation of 254nm UV light are 1940 and 96.3, at room temperature and 175 degrees C, respectively. Compared to the reported UV detectors with material of 4H-SiCor beta-SiC, the developed n-SiCN/p-SiCN homojunction has better current ratio in both room and elevated temperature. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：60 / 63
页数：4
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