Microwave Atomic Force Microscopy: Quantitative Measurement and Characterization of Electrical Properties on the Nanometer Scale

被引：13

作者：

Zhang, Lan ^{[1
]}

Ju, Yang ^{[1
]}

Hosoi, Atsushi ^{[1
]}

Fujimoto, Akifumi ^{[1
]}

机构：

[1] Nagoya Univ, Dept Mech Sci & Engn, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 01期

关键词：

CONTACTLESS MEASUREMENT; CONDUCTIVITY;

D O I：

10.1143/APEX.5.016602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report a noncontact and quantitative method of evaluating and characterizing electrical properties with a nanometer-scale spatial resolution. Microwave atomic force microscopy (M-AFM) can be used to obtain the topography and microwave image of materials in one scanning process simultaneously. Under the frequency modulation (FM) AFM mode, we successfully applied M-AFM to create a microwave image of a Au nanowire with a spatial resolution of 170 nm. Moreover, based on the analytical and explicit expressions proposed, M-AFM can implement the quantitative evaluation and characterization of the local conductivity of materials on the nanometer scale. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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