Sol-gel epitaxial growth of La1-xCaxMnO3 with colossal magnetoresistance effect

被引：65

作者：

Bae, SY ^{[1
]}

Wang, SX ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,SOLID STATE LAB,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 01期

关键词：

D O I：

10.1063/1.118095

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The successful sol-gel growth of colossal magnetoresistive La-Ca-Mn-O powder and epitaxial thin film is reported. Homogeneous powders were prepared at a temperature of 315 degrees C and epitaxial thin films were obtained on MgO(100) and LaAlO3(100) through heat treatment at 700-950 degrees C. A transition from semiconductor (negative d rho/dT) to metal (positive d rho/dT) was observed at 225 K, which was located in proximity to the magnetic transition temperature (T-c) of 228 K. A peak magnetoresistance ratio of similar to 900% occurred at 220 K. (C) 1996 American Institute of Physics.

引用

页码：121 / 123

页数：3

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