Linearization of RF Power Amplifiers Using an Enhanced Memory Polynomial Predistorter

被引:0
|
作者
Tafuri, Felice Francesco [1 ]
Guaragnella, Cataldo [2 ]
Fiore, Marco [3 ]
Larsen, Torben [1 ]
机构
[1] Aalborg Univ, Dept Elect Syst, Niels Jernes Vej 12, DK-9220 Aalborg, Denmark
[2] Politecn Bari, Dept Elect & Elect, I-70125 Bari, Italy
[3] Electronika Srl, I-700276 Palo Del Colle, BA, Italy
来源
2012 NORCHIP | 2012年
关键词
power amplifier; gallium nitride (GaN); memory effects; linearization; memory polynomial; digital predistortion; MODEL;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Radio frequency power amplifiers (PAs) play a key-role in transceivers for mobile communications and their linearity is a crucial aspect. In order to meet the linearity requirements dictated by the standard at a reasonable efficiency, the usage of a linearization technique is required. In this paper we propose a linearization by means of a new type of digital predistorter, defined directly in the I-Q domain. The architecture of the proposed predistorter can be understood as an enhancement of the memory polynomial model (MPM) by means of additional I-Q terms. The usage of the proposed predistorter allows a more robust linearization of the whole RF transmitter because the enhancement of the model with additional I-Q terms can guarantee a more versatile compensation which is beneficial when the distortion comes from the joint contribution of the P A and the quadrature modulator. The proof of concept is achieved by measurements on a commercial PA in GaN technology and the performance of the proposed predistorter is illustrated.
引用
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页数:4
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