Thermal-Annealing Effect on the Diode Characteristics of n-ZnO/p-Si (111)

被引：3

作者：

Lee, J. H. ^{[1
]}

Lee, J. Y.

Kim, J. J.

Kim, H. S.

Jang, N. W. ^{[1
]}

Cho, H. K. ^{[2
]}

Cho, C. R. ^{[3
]}

机构：

[1] Korea Maritime Univ, Dept Elect Engn, Pusan 606791, South Korea

[2] Sungkyunkwan Univ, Sch Mat Sci Engn, Suwon 440746, South Korea

[3] Pusan Natl Univ, Dept Nano Fus Technol, Miryang 627706, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 54卷 / 02期

关键词：

ZnO; p-Si; Thermal annealing; Heterojunction; LED; FILMS; DEPOSITION;

D O I：

10.3938/jkps.54.901

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Zinc-oxide films were deposited, by a RF (radio-frequency) sputtering system, oil p-type Si (111) substrates at room temperature. The films were annealed at various temperatures in order to study the annealing temperature dependence of the diode characteristics of n-ZnO/p-Si (111). An n-ZnO/p-Si heterojunction diode was fabricated by using a photolithographic method. The diode characteristics were investigated by using current - voltage measurements (HP4145B). The effect of annealing temperature oil the structural and the morphological property was investigated by using X-ray diffraction (XRD) and atomic force microscopy (AFM). The turn-on voltage of the diodes was about 1.4 similar to 1.7 V and the current-voltage curve revealed an excellent rectification behavior. The diode characteristics changed with annealing temperature and n-ZnO/p-Si (111) heterojunction diodes exhibited yellow light at 13 similar to 15 V.

引用

页码：901 / 905

页数：5

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