Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micropillars

被引：67
作者：
Kim, Jong Kyu [1 ]
Noemaun, Ahmed N. [1 ]
Mont, Frank W. [1 ]
Meyaard, David [1 ]
Schubert, E. Fred [1 ]
Poxson, David J. [2 ]
Kim, Hyunsoo [3 ]
Sone, Cheolsoo [3 ]
Park, Yongjo [3 ]
机构：
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
[3] Samsung ElectroMech, Cent R&D Inst, Suwon 443743, South Korea
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 22期
基金：
美国国家科学基金会;
关键词：
gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; multilayers; refractive index; silicon compounds; sputter deposition; titanium compounds; wide band gap semiconductors;
D O I：
10.1063/1.3041644
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A method for enhancing the light-extraction efficiency of GaInN light-emitting diodes (LEDs) by complete elimination of total internal reflection is reported. Analytical calculations show that GaInN LEDs with multilayer graded-refractive-index pillars, in which the thickness and refractive index of each layer are optimized, have no total internal reflection. This results in a remarkable improvement in light-extraction efficiency. GaInN LEDs with five-layer graded-refractive-index pillars, fabricated by cosputtering TiO(2) and SiO(2), show a light-output power enhanced by 73% and a strong side emission, consistent with analytical calculations and ray-tracing simulations.
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页数：3
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