4-12-and 25-34-GHz Cryogenic mHEMT MMIC Low-Noise Amplifiers

被引：36

作者：

Aja Abelan, Beatriz ^{[1
]}

Seelmann-Eggebert, Matthias ^{[2
]}

Bruch, Daniel ^{[2
]}

Leuther, Arnulf ^{[2
]}

Massler, Hermann ^{[2
]}

Baldischweiler, Boris ^{[2
]}

Schlechtweg, Michael ^{[2
]}

Daniel Gallego-Puyol, Juan ^{[3
]}

Lopez-Fernandez, Isaac ^{[3
]}

Diez-Gonzalez, Carmen ^{[3
]}

Malo-Gomez, Inmaculada ^{[3
]}

Villa, Enrique ^{[1
]}

Artal, Eduardo ^{[1
]}

机构：

[1] Univ Cantabria, Dept Commun Engn, E-39005 Santander, Spain

[2] Fraunhofer Inst Appl Solid State Phys IAF, D-79108 Freiburg, Germany

[3] IGN, CDT, Ctr Astron Yebes, Guadalajara 19080, Spain

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2012年 / 60卷 / 12期

关键词：

Cryogenic low-noise amplifier (LNA); metamorphic high electron-mobility transistor (mHEMT); monolithic microwave integrated circuit (MMIC); BAND;

D O I：

10.1109/TMTT.2012.2221735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) for cryogenic applications based on a 100-nm metamorphic high-electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide are reported. A three-stage LNA, operating in 4-12 GHz and cooled to 15 K exhibits an associated gain of 31.5 dB +/- 1.8 dB and average noise temperature of 5.3 K (NF = 0.079 dB) with a low power dissipation of 8 mW. Additionally another three-stage LNA 25-34 GHz cooled to 15 K has demonstrated a flat gain of 24.2 dB 0.4 +/- dB with 15.2 K (NF = 0.22 dB), average noise temperature, with a very low power dissipation of 2.8 mW on chip. The mHEMT-based LNA MMICs have demonstrated excellent noise characteristics at cryogenic temperatures for their use in radio-astronomy applications.

引用

页码：4080 / 4088

页数：9

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