Surface segregation in (Ga,In)As/GaAs quantum boxes

被引：52

作者：

Grandjean, N

Massies, J

Tottereau, O

机构：

[1] Centre de Recherche sur lșHétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA/CNRS)

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.55.R10189

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Three-dimensional coherent islands formed during the highly strained growth of In(0.3)G(0.7)As on GaAs(001) are studied by scanning tunneling microscopy. High-resolution images evidence two different types of surface reconstructions between the top and the bottom of the islands. While a 2x4 GaAs(001)-like reconstruction is observed on the wetting layer, the top layer exhibits the (2x4)alpha 2 phase, which is characteristic of the InAs(001) reconstructed surface. This is the consequence of In surface segregation leading to the formation of a monolayer of InAs at the island top. Finally, photoluminescence experiments exemplify the effect of segregation on the InxGa1-xAs/GaAs quantum box optical properties.

引用

页码：10189 / 10192

页数：4

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