High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor

被引：18
作者：
Lin, YS
Hsu, WC
Wu, CH
Lin, W
Hsu, RT
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Land Mark Optoelect Corp, Tainan, Taiwan
[3] Nan Jeon Jr Coll Technol & Commerce, Dept Elect Engn, Tainan, Taiwan
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 11期
关键词：
D O I：
10.1063/1.124772
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A double delta-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor has been successfully fabricated by metalorganic chemical-vapor deposition. Improved electron mobility as high as 5410 (19 200) cm(2)/V s at 300 (77) K along with turn-on voltage as high as 2.3 V and reverse gate-to-drain voltage up to 75 V are achieved. These characteristics are attributed to the use of the delta-doped, undoped InGaP Schottky layer, and undoped GaAs setback layer. Moreover, the parasitic parallel conduction can be eliminated. The activation energy is also deduced. (C) 1999 American Institute of Physics. [S0003-6951(99)01237-1].
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页码：1616 / 1618
页数：3
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