Formation and characterization of Ta2O5/TaOx films formed by O ion implantation

被引：6

作者：

Ruffell, S. ^{[1
]}

Kurunczi, P. ^{[1
]}

England, J. ^{[1
]}

Erokhin, Y. ^{[1
]}

Hautala, J. ^{[1
]}

Elliman, R. G. ^{[2
]}

机构：

[1] Appl Mat Inc, Silicon Syst Grp, Varian Semicond Equipment, Santa Clara, CA 95054 USA

[2] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2013年 / 307卷

基金：

澳大利亚研究理事会;

关键词：

Ion-implantation; Resistive switching; Nonvolatile memory; Tantalum oxide; TANTALUM;

D O I：

10.1016/j.nimb.2012.11.092

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ta2O5/TaOx (oxide/suboxide) heterostructures are fabricated by high fluence O ion-implantation into deposited Ta films. The resultant films are characterized by depth profiling X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy (XTEM), four-point probe, and current-voltage and capacitance-voltage measurements. The measurements show that Ta2O5/TaOx oxide/suboxide heterostructures can be fabricated with the relative thicknesses of the layers controlled by implantation energy and fluence. Electrical measurements show that this approach has promise for high volume manufacturing of resistive switching memory devices based on oxide/suboxide heterostructures. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：491 / 494

页数：4

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