Specific Growth Features of Nanostructures for Terahertz Quantum Cascade Lasers and Their Physical Properties

被引：3

作者：

Cirlin, G. E. ^{[1
,2
,3
,4
]}

Reznik, R. R. ^{[4
]}

Zhukov, A. E. ^{[1
]}

Khabibullin, R. A. ^{[5
]}

Maremyanin, K. V. ^{[6
,7
]}

Gavrilenko, V. I. ^{[6
,7
]}

Morozov, S. V. ^{[6
,7
]}

机构：

[1] St Petersburg Acad Univ, Russian Acad Sci, St Petersburg 194021, Russia

[2] St Petersburg Electrotech Univ LETI, St Petersburg 197376, Russia

[3] Russian Acad Sci, St Petersburg Sci Ctr, St Petersburg 199034, Russia

[4] ITMO Univ, St Petersburg 197101, Russia

[5] Russian Acad Sci, Inst Ultrahigh Frequency Semicond Elect, Moscow 117105, Russia

[6] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[7] Lobachevsky State Univ, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2020年 / 54卷 / 09期

基金：

俄罗斯科学基金会;

关键词：

quantum-cascade laser; molecular-beam epitaxy; terahertz radiation; semiconductor nanostructures;

D O I：

10.1134/S1063782620090298

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Data on the synthesis of structures for a quantum cascade terahertz laser in the AlGaAs/GaAs material system on GaAs substrates using the molecular-beam-epitaxy method and their characterization are presented. The specific features necessary for the implementation of such structures are considered. It is shown that, for this configuration, almost single-mode lasing is observed at a frequency of similar to 3 THz up to a temperature of similar to 60 K.

引用

页码：1092 / 1095

页数：4

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