Temperature dependence of the switching field in all-perpendicular spin-valve nanopillars

被引：11
|
作者：
Gopman, D. B. [1 ]
Bedau, D. [1 ,2 ]
Wolf, G. [1 ]
Mangin, S. [3 ]
Fullerton, E. E. [4 ]
Katine, J. A. [2 ]
Kent, A. D. [1 ]
机构：
[1] NYU, Dept Phys, New York, NY 10003 USA
[2] HGST San Jose Res Ctr, San Jose, CA 95135 USA
[3] Univ Lorraine, CNRS, Inst Jean Lamour, UMR 7198, Nancy, France
[4] Univ Calif San Diego, CMRR, La Jolla, CA 92093 USA
来源：
PHYSICAL REVIEW B | 2013年 / 88卷 / 10期
基金：
美国国家科学基金会;
关键词：
MAGNETIZATION REVERSAL; JUNCTION; FLUCTUATIONS; ANISOTROPY; FILMS; TIME;
D O I：
10.1103/PhysRevB.88.100401
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75-nm-diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (i.e. the mean switching field and the variance of the switching field distribution) from 20 up to 400 K are in disagreement with a Neel-Brown model that assumes a temperature independent barrier height and anisotropy field. We introduce a modified Neel-Brown model that fits the experimental data in which we attribute a T-3/2 dependence to the barrier height and the anisotropy field due to the temperature dependent magnetization and anisotropy energy.
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页数：5
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