Saturation magnetostriction of an ultrathin CoFe free-layer on double-layered underlayers

被引:9
作者
Fukuzawa, H [1 ]
Kamiguchi, Y [1 ]
Koi, K [1 ]
Iwasaki, H [1 ]
Sahashi, M [1 ]
机构
[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan
关键词
D O I
10.1063/1.1434551
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated the saturation magnetostriction (lambda(s)) of an ultrathin CoFe free-layer on double-layered underlayers of Ru/Cu. By increasing the Ru underlayer thickness, lambda(s) becomes positively large; on the other hand, lambda(s) becomes negatively large by increasing the Cu underlayer thickness. This tendency can be explained by the model where lambda(s) is changed by the film strain. The lambda(s) sensitivity on the Cu underlayer thickness becomes large with increasing the Co concentration of the CoFe free-layer. This indicates that CoFe lambda(s) becomes sensitive to strain with increasing Co concentration. In order to realize small magnetostriction spin-valve films with an ultrathin CoFe free-layer, we have to take care of the lattice strain of the film. (C) 2002 American Institute of Physics.
引用
收藏
页码:3120 / 3124
页数:5
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