New Qualified Industrial AlGaN/GaN HEMT Process: Power Performances & Reliability Figures of Merit

被引：0

作者：

Floriot, D.

Blanck, H. ^{[1
]}

Bouw, D.

Bourgeois, F. ^{[1
]}

Camiade, M.

Favede, L.

Hosch, M. ^{[1
]}

Jung, H. ^{[1
]}

Lambert, B.

Nguyen, A.

Riepe, K. ^{[1
]}

Splettstoesse, J. ^{[1
]}

Stieglauer, H. ^{[1
]}

Thorpe, J. ^{[1
]}

Meiners, U. ^{[1
]}

机构：

[1] United Monolith Semicond GmbH, D-89081 Ulm, Germany

来源：

2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年

关键词：

AlGaN/GaN HEMT; power transistor; technology; reliability; robustness;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the performances of a new power 0.5 mu m gate length AlGaN / GaN HEMT process named GH50_10. This process has been developed to address applications and market needs up to 7 GHz. A specific emphasis has been attached to find a trade- off in between power / efficiency and linearity. After an introduction of the context, a short description of the process manufacturing is given including spread of the DC parameters. From the qualification procedure, key reliability figures of the process are presented like the main energy of activation and an evaluation of the Median Time to Failure, evaluated respectively to 1.95ev and 10(6) hours at 200 degrees C. Power performances are presented from L to C bands from 15W for the elementary power transistors to 50W for high power packaged transistors. This technology is presently available at industrial level to address products requirements for telecom and military needs. Compliance to space requirement is underway

引用

页码：317 / 320

页数：4