Modeling Bias Temperature Instability During Stress and Recovery

被引：1

作者：

Grasser, Tibor ^{[1
]}

Goes, Wolfgang ^{[1
]}

Kaczer, Ben ^{[2
]}

机构：

[1] TU Wien, Inst Microelect, Christian Doppler Lab TCAD, Gusshausstr 27-29-E360, A-1040 Vienna, Austria

[2] IMEC, B-3001 Leuven, Belgium

来源：

SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2008年

关键词：

D O I：

10.1109/SISPAD.2008.4648238

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bias temperature instability has attracted a lot of attention as a dominant degradation mechanism in modern MOS transistors. Despite considerable effort, the exact physics behind this mechanisms are still controversial. We discuss some numerical aspects of our recently presented model which is capable of reproducing the main features of the phenomenon. Furthermore, we demonstrate how the model can be applied to understand variations in nominally identically stressed devices which have become important in the small area limit.

引用

页码：65 / +

页数：2

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