Junctionless multigate field-effect transistor

被引：781

作者：

Lee, Chi-Woo ^{[1
]}

Afzalian, Aryan ^{[1
]}

Akhavan, Nima Dehdashti ^{[1
]}

Yan, Ran ^{[1
]}

Ferain, Isabelle ^{[1
]}

Colinge, Jean-Pierre ^{[1
]}

机构：

[1] Univ Coll Cork Lee Maltings, Tyndall Natl Inst, Cork, Ireland

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 05期

基金：

爱尔兰科学基金会;

关键词：

field effect transistors; MOSFET; p-n junctions; semiconductor doping; ACCUMULATION-MODE; MOSFETS; GATE;

D O I：

10.1063/1.3079411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper describes a metal-oxide-semiconductor (MOS) transistor concept in which there are no junctions. The channel doping is equal in concentration and type to the source and drain extension doping. The proposed device is a thin and narrow multigate field-effect transistor, which can be fully depleted and turned off by the gate. Since this device has no junctions, it has simpler fabrication process, less variability, and better electrical properties than classical MOS devices with source and drain PN junctions.

引用

页数：2

共 6 条

[1] High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs [J].

Cheng, W. ;

Teramoto, A. ;

Kuroda, R. ;

Hirayama, M. ;

Ohmi, T. .

MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) :2105-2108

[2] Experimental evaluation of effects of channel doping on characteristics of FinFETs [J].

Endo, Kazuhiko ;

Ishikawa, Yuki ;

Liu, Yongxum ;

Masahara, Meishoku ;

Matsukawa, Takashi ;

O'uchi, Shin-Ichi ;

Ishii, Kenichi ;

Yamauchi, Hiromi ;

Tsukada, Junichi ;

Suzuki, Eiichi .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (12) :1123-1125

[3] Comparison of contact resistance between accumulation-mode and inversion-mode multigate FETs [J].

Lee, Chi-Woo ;

Lederer, Dimitri ;

Afzalian, Aryan ;

Yan, Ran ;

Dehdashti, Nima ;

Xiong, Weize ;

Colinge, Jean-Pierre .

SOLID-STATE ELECTRONICS, 2008, 52 (11) :1815-1820

[4] Investigation of deep submicron single and double gate SOI MOSFETs in accumulation mode for enhanced performance [J].

Rauly, E ;

Iñiguez, B ;

Flandre, D .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2001, 4 (03) :G28-G30

[5] Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations [J].

Yan, Ran ;

Lynch, Danny ;

Cayron, Thibault ;

Lederer, Dimitri ;

Afzalian, Aryan ;

Lee, Chi-Woo ;

Dehdashti, Nima ;

Colinge, J. P. .

SOLID-STATE ELECTRONICS, 2008, 52 (12) :1872-1876

[6]

Yang FL, 2004, 2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P196

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