Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0≤x≤0.13)

Metal-semiconductor-metal (MSM) photodetectors have been fabricated on InxGa1-xN epitaxial films grown by metalorganic chemical vapor deposition within the composition range 0 less than or equal to x less than or equal to 0.13. The dark current and spectral response were measured for devices with a varying In mole fraction x. The devices, which had nominal finger widths and finger spacing of 5 gym, were biased with modest. voltages in the range 2 less than or equal to V-bias less than or equal to 5 V In general, turn-on wavelength and dark current increased with increasing x. Turn-on wavelengths ranged from lambda = 370 nm to 430 nm and dark current densities ranged from I-dark = 2 x 10(-2) A/cm(2) (V-bias = 5 V, x approximate to 0.05) to 9 x 10(4) A/cm(2) (V-bias = 2 V, x approximate to 0.13) depending on the In content, x, of the device active area.