Influence of point defects on the electrical conductivity and dielectric properties of langasite

被引：14

作者：

Domoroshchina, EN

Dubovskii, AB

Kuz'micheva, GM

Semenkovich, GV

机构：

[1] Lomonosov State Acad Fine Chem Technol, Moscow 119571, Russia

[2] All Russia Res Inst Mineral Mat Synth, Vladimir 601650, Russia

来源：

INORGANIC MATERIALS | 2005年 / 41卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1007/s10789-005-0290-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature-dependent electrical conductivity and dielectric permittivity and room-temperature optical absorption spectra of La3Ga5SiO14 (langasite) crystals grown under different conditions are measured. The resistivity and peak-loss temperature t(tan delta) of the crystals arc shown to be determined by the concentration of oxygen vacancies, which originate from changes in melt composition during crystal growth, The t(tan delta) of langasite is shown for the first time to be anisotropic (measurements on Z- and X-cuts), The properties of the crystals are suitable for the fabrication of stable piezoelectric elements capable of operating above 600 degrees C.

引用

页码：1218 / 1221

页数：4

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