Noninvasive Lift-off Technology for Integration of GaN HEMTs with Diamond

被引：2

作者：

Wu, Mei ^{[1
]}

Zhang, Xinchuang ^{[1
]}

Yang, Ling ^{[1
]}

Ma, Xiaohua ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] State Key Discipline Lab Wide Bandgap Semicond Te, Xian, Peoples R China

来源：

6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022) | 2022年

关键词：

GaN HEMTs; diamond; epitaxial lift-off; thermal management; ALGAN/GAN HEMTS;

D O I：

10.1109/EDTM53872.2022.9798241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a noninvasive AlGaN/GaN epitaxial lift-off (ELO) method based on SOI substrate. The AlGaN/GaN epitaxial layer has been successfully released with the thin Si top layer, and a small surface roughness of 0.214 nm is obtained. Using this ELO method and wafer bonding technique, GaN-on-Si/Diamond HEMT has been fabricated and the 2DEG characteristics of the heterojunction is highly maintained after the transfer process. Besides, both electrical and thermal performance show great improvement after transfer onto diamond substrate, indicating that the proposed ELO process can be applied for the integration of GaN HEMTs with diamond successfully.

引用

页码：122 / 124

页数：3

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