Defects in the Self-Assembly of Block Copolymers and Their Relevance for Directed Self-Assembly

被引:119
|
作者
Li, Weihua [1 ,2 ]
Mueller, Marcus [1 ]
机构
[1] Univ Gottingen, Inst Theoret Phys, D-37077 Gottingen, Germany
[2] Fudan Univ, State Key Lab Mol Engn Polymers, Dept Macromol Sci, Shanghai 200433, Peoples R China
基金
中国国家自然科学基金;
关键词
self-assembly; block copolymers; dislocations; disclinations; defect annihilation; chemoepitaxy; graphoepitaxy; minimum free-energy path; GRAIN-BOUNDARY MORPHOLOGY; FORMING DIBLOCK COPOLYMER; FIELD-INDUCED ALIGNMENT; THIN-FILMS; ELECTRIC-FIELD; PHASE-BEHAVIOR; DENSITY MULTIPLICATION; MICROPHASE SEPARATION; ORIENTATIONAL ORDER; FREE-ENERGY;
D O I
10.1146/annurev-chembioeng-061114-123209
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
Block copolymer self-assembly provides a platform for fabricating dense, ordered nanostructures by encoding information in the chemical architecture of multicomponent macromolecules. Depending on the volume fraction of the components and chain topology, these macromolecules form a variety of spatially periodic microphases in thermodynamic equilibrium. The kinetics of self-assembly, however, often results in initial morphologies with defects, and the subsequent ordering is protracted. Different strategies have been devised to direct the self-assembly of copolymer materials by external fields to align and perfect the self-assembled nanostructures. Understanding and controlling the thermodynamics of defects, their response to external fields, and their dynamics is important because applications in microelectronics either require extremely low defect densities or aim at generating specific defects at predetermined locations to fabricate irregular device-oriented structures for integrated circuits. In this review, we discuss defect morphologies of block copolymers in the bulk and thin films, highlighting (a) analogies to and differences from defects in other crystalline materials, (b) the stability of defects and their dynamics, and (c) the influence of external fields.
引用
收藏
页码:187 / 216
页数:30
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