Semiconductor Diode in a Long Cavity in the Active Mode-Locking Regime

被引：2
作者：
Klement'ev, V. M. [1 ]
Korel, I. I.
Kurbatov, A. A.
Titov, E. A.
机构：
[1] Russian Acad Sci, Siberian Branch, Inst Laser Phys, Novosibirsk 630090, Russia
来源：
OPTICS AND SPECTROSCOPY | 2014年 / 116卷 / 02期
关键词：
NONLINEAR THEORY; LASERS;
D O I：
10.1134/S0030400X14020118
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A set of equations governing field amplitudes and phases that describe the single-mode regime of oscillation of a semiconductor diode in a long cavity is derived. The set of equations is generalized to a multimode regime, taking into consideration modulation of the diode current with frequency close to the mode beat frequency. The exact solution obtained for a simple case reveals the existence of an ultrashort-pulse generation regime. The shape of the pulse, its width, and the number of modes involved in its formation are determined.
引用
收藏
页码：291 / 297
页数：7
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