Transient 3D simulation of Czochralski crystal growth considering diameter variations

被引：10

作者：

Raufeisen, A. ^{[1
]}

Breuer, M. ^{[2
]}

Botsch, T. ^{[1
]}

Delgado, A. ^{[2
]}

机构：

[1] Georg Simon Ohm Univ Appl Sci Nuremberg, Fac Proc Engn VT, D-90489 Nurnberg, Germany

[2] Univ Erlangen Nurnberg, Inst Fluid Mech ISTM, D-91058 Erlangen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 03期

关键词：

Large-Eddy simulation; Czochralski method; Semiconducting silicon;

D O I：

10.1016/j.jcrysgro.2008.09.073

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

For numerical simulations of the Czochralski crystal growth process, in the literature the quasi-steady state approach is used, i.e. the diameter of the crystal is kept constant. However, this leads to errors in the computation of the phase interface. In the present work, for the first time in 313, the three-phase junction between melt, crystal and atmosphere is allowed to move in horizontal direction. Thus, diameter changes during the crystal growth process could be simulated accordingly. In the future, the vertical movement will be allowed as well, considering the free surface stresses. This will enable realistic predictions of the transient behavior of the crystallization front. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：695 / 697

页数：3

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