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- [3] Thickness measurements for ultrathin-film insulator MOS structure using Fowler-Nordheim tunneling current oscillations Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (10): : 999 - 1004
- [9] Estimate of width of transition region of barrier for thin film insulator MOS structure using fowler-Nordheim tunneling current Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (02): : 228 - 233