Environmental effects on the electrical behavior of pentacene thin-film transistors with a poly(methyl methacrylate) gate insulator

被引:23
作者
Park, Jaehoon [1 ]
Do, Lee-Mi [2 ]
Bae, Jin-Hyuk [3 ]
Jeong, Ye-Sul [4 ]
Pearson, Christopher [4 ]
Petty, Michael C. [4 ]
机构
[1] Hallym Univ, Dept Elect Engn, Chunchon 200702, South Korea
[2] Elect & Telecommun Res Inst, IT Convergence Technol Res Lab, Taejon 305700, South Korea
[3] Kyungpook Natl Univ, Sch Elect Engn, Taegu 702701, South Korea
[4] Univ Durham, Sch Engn & Comp Sci, Durham DH1 3LE, England
关键词
Organic thin-film transistor; Pentacene; Environmental stability; FIELD-EFFECT TRANSISTORS; ORGANIC TRANSISTORS; HIGH-MOBILITY; HIGH-PERFORMANCE; STABILITY; SEMICONDUCTOR; CHAINS;
D O I
10.1016/j.orgel.2013.05.009
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electrical properties of top-contact pentacene thin-film transistors (TFTs) with a poly(methyl methacrylate) (PMMA) gate dielectric were analyzed in air and vacuum environments. Compared to the vacuum case, the pentacene TFT in air exhibited lower drain currents and more pronounced shifts in the threshold voltage upon reversal of the gate voltage sweep direction, together with a decrease in the field-effect mobility. These characteristic variations were explained in terms of two distinctive actions of polar H2O molecules in pentacene TFT. H2O molecules were suggested to diffuse under the source and drain contacts and interrupt the charge injection into the pentacene film, whereas those that permeate at the pentacene/PMMA interface retard hole depletion in and around the TFT channel. The diffusion process was much slower than the permeation process. The degraded TFT characteristics in air could be recovered mostly by storing the device under vacuum, which suggests that the air instability of TFTs is due mainly to the physical adsorption of H2O molecules within the pentacene film. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:2101 / 2107
页数:7
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