Spin-injection into epitaxial graphene on silicon carbide

被引：1
作者：
Konishi, Keita [1 ]
Cui, Zhixin [1 ]
Hiraki, Takahiro [1 ]
Yoh, Kanji [1 ]
机构：
[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Kita Ku, Sapporo, Hokkaido 0608628, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2013年 / 378卷
关键词：
Low dimensional structures; Silicon carbide; Graphene; Spin-injection; ROOM-TEMPERATURE; PRECESSION; TRANSPORT; GAS;
D O I：
10.1016/j.jcrysgro.2012.12.168
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have studied the spin-injection properties in epitaxial graphene on SiC. The ferromagnetic metal (FM) electrodes were composed of a tunnel barrier layer AlOx (14 angstrom) and a ferromagnetic Co (600 angstrom) layer. We have successfully observed the clear resistance peaks indicating spin-injection both in the "local" and "non-local" spin measurement set-ups at low temperatures. We estimate spin-injection rate of 1% based on "non-local" measurement and 1.6% based on local measurements. Spin-injection rate of multilayer graphene by mechanical exfoliation method was twice as high as single layer graphene on SiC based on "local" measurement. (c) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：385 / 387
页数：3
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