Numerical Computation of Eigenenergy and Intersubband Transition Energy of GaAs Triangular Nanowire Embedded in AlxGa1-xAs Rectangular Wire

被引:0
|
作者
Deyasi, Arpan [1 ]
Bhattacharyya, S. [2 ]
Das, N. R. [3 ]
机构
[1] RCC Inst Informat Technol, Dept Elect & Commun Engn, Kolkata 700015, India
[2] Modern Inst Engn & Technol, Dept Comp Sci & Engn, Bandel 712123, India
[3] Univ Calcutta, Inst Radio Phys & Elect, Kolkata 700009, India
来源
2012 5TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC) | 2012年
关键词
Finite Difference Technique; Energy Eigenvalue; Triangular Quantum Wire; Intersubband Transition Energies; CROSS-SECTIONS; QUANTUM WIRES; EIGENFUNCTIONS; ELECTRON; WELL;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Energy eigenvalues and intersubband transition energies of a triangular quantum wire have been numerically computed by solving time-independent Schrodinger's equation with appropriate boundary conditions using finite difference technique for the lowest three eigenstates. Triangular wire is made of GaAs material, which is embedded in a rectangular wire of AlxGa1-xAs. Composition of AlxGa1-xAs is varied to study energy profile and intersubband transition energies of the wire. Dimensional effect is also studied by varying width and height of the triangular wire. The study is carried out taking into consideration conduction band discontinuity and effective mass mismatch at boundaries. Fine optical tuning for quantum wire laser is possible through proper selection of material composition and dimension of the wire.
引用
收藏
页数:4
相关论文
共 5 条
  • [1] Effect on Shell Thickness on Intersubband Transition Energies in GaAs/AlxGa1-xAs Inverted Core-Shell Nanodot
    Deyasi, Arpan
    Bhattacharyya, S.
    Das, N. R.
    ADVANCED NANOMATERIALS AND NANOTECHNOLOGY, 2013, 143 : 551 - 560
  • [2] Nonlinear intersubband absorption coefficient in an AlxGa1-xAs/GaAs quantum cascade laser-like profile
    Rojas-Briseno, J. G.
    Del Rio-De Santiago, A.
    Mora-Ramos, M. E.
    Martinez-Orozco, J. C.
    OPTIK, 2020, 201
  • [3] Analysis of Electronic Structure and Binding Energy in Five-Electron GaAs/AlxGa1-xAs Quantum Dots Under Penetrable Confinement Potential
    Yakar, Yusuf
    Cakir, Bekir
    Ozmen, Ayhan
    ADVANCED THEORY AND SIMULATIONS, 2025,
  • [4] Multi-shell spherical GaAs/AlxGa1-xAs quantum dot shells-size distribution as a mechanism to generate intermediate band energy levels
    Rodriguez-Magdaleno, K. A.
    Perez-Alvarez, R.
    Martinez-Orozco, J. C.
    Pernas-Salomon, R.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2017, 88 : 142 - 148
  • [5] The impact of hydrostatic pressure and temperature on the binding energy, linear, third-order nonlinear, and total optical absorption coefficients and refractive index changes of a hydrogenic donor impurity confined in GaAs/AlxGa1-xAs double quantum dots
    Ed-Dahmouny, Ayoub
    Sali, Ahmed
    Es-Sbai, Najia
    Arraoui, Reda
    Duque, C. A.
    EUROPEAN PHYSICAL JOURNAL PLUS, 2022, 137 (07)