Enhancement in thermoelectric properties of Te-embedded Bi2Te3 by preferential phonon scattering in heterostructure interface

被引：101
|
作者：
Choi, Hyejin [1 ]
Jeong, Kwangsik [1 ]
Chae, Jimin [1 ]
Park, Hanbum [1 ]
Baeck, Juheyuck [1 ]
Kim, Tae Hyeon [1 ]
Song, Jae Yong [2 ]
Park, Jaehun [3 ]
Jeong, Kwang-Ho [1 ]
Cho, Mann-Ho [1 ]
机构：
[1] Yonsei Univ, Dept Phys, 50 Yonsei Ro, Seoul 03722, South Korea
[2] Korea Res Inst Stand & Sci, Ctr Mat Genome, Daejeon 34113, South Korea
[3] POSTECH, Pohang Accelerator Lab, Pohang 790834, South Korea
来源：
NANO ENERGY | 2018年 / 47卷
基金：
新加坡国家研究基金会;
关键词：
Bi2Te3; Thermoelectric; Nano-structure; LATTICE THERMAL-CONDUCTIVITY; TOTAL-ENERGY CALCULATIONS; EPITAXIAL-GROWTH; FIGURE; FILMS; SI; DYNAMICS; STATE; GAAS;
D O I：
10.1016/j.nanoen.2018.03.009
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A comprehensive understanding of the nano-structural effects that cause reduction in thermal conductivity represents important challenges for the development of thermoelectric materials with an improved figure of merit ZT. Bismuth telluride (Bi2Te3)-based thermoelectric materials exhibit very low levels of thermal conductivity. In this study, a Te crystal-embedded Bi2Te3 (Te-Bi2Te3) thin film was formed by establishing a specific annealing temperature for a Te-rich Bi/Te multilayered structure. Modulations in structure and composition were observed at the boundaries between the two phases of Te and Bi2Te3. Furthermore, the samples contained regularly shaped nanometer-scale Bi2Te3 single grains. Therefore, we obtained a dramatic ZT value of 2.27 (+ 0.04, -0.08) at 375 K from the Te-Bi2Te3 thin film. Finally, we confirmed that interface phonon scattering between the Te-Bi2Te3 boundaries plays an important role in inter-grain phonon transport, which results in a reduction in the lattice thermal conductivity.
引用
收藏
页码：374 / 384
页数：11
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