Enhancement in thermoelectric properties of Te-embedded Bi2Te3 by preferential phonon scattering in heterostructure interface

被引：107

作者：

Choi, Hyejin ^{[1
]}

Jeong, Kwangsik ^{[1
]}

Chae, Jimin ^{[1
]}

Park, Hanbum ^{[1
]}

Baeck, Juheyuck ^{[1
]}

Kim, Tae Hyeon ^{[1
]}

Song, Jae Yong ^{[2
]}

Park, Jaehun ^{[3
]}

Jeong, Kwang-Ho ^{[1
]}

Cho, Mann-Ho ^{[1
]}

机构：

[1] Yonsei Univ, Dept Phys, 50 Yonsei Ro, Seoul 03722, South Korea

[2] Korea Res Inst Stand & Sci, Ctr Mat Genome, Daejeon 34113, South Korea

[3] POSTECH, Pohang Accelerator Lab, Pohang 790834, South Korea

来源：

NANO ENERGY | 2018年 / 47卷

基金：

新加坡国家研究基金会;

关键词：

Bi2Te3; Thermoelectric; Nano-structure; LATTICE THERMAL-CONDUCTIVITY; TOTAL-ENERGY CALCULATIONS; EPITAXIAL-GROWTH; FIGURE; FILMS; SI; DYNAMICS; STATE; GAAS;

D O I：

10.1016/j.nanoen.2018.03.009

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A comprehensive understanding of the nano-structural effects that cause reduction in thermal conductivity represents important challenges for the development of thermoelectric materials with an improved figure of merit ZT. Bismuth telluride (Bi2Te3)-based thermoelectric materials exhibit very low levels of thermal conductivity. In this study, a Te crystal-embedded Bi2Te3 (Te-Bi2Te3) thin film was formed by establishing a specific annealing temperature for a Te-rich Bi/Te multilayered structure. Modulations in structure and composition were observed at the boundaries between the two phases of Te and Bi2Te3. Furthermore, the samples contained regularly shaped nanometer-scale Bi2Te3 single grains. Therefore, we obtained a dramatic ZT value of 2.27 (+ 0.04, -0.08) at 375 K from the Te-Bi2Te3 thin film. Finally, we confirmed that interface phonon scattering between the Te-Bi2Te3 boundaries plays an important role in inter-grain phonon transport, which results in a reduction in the lattice thermal conductivity.

引用

页码：374 / 384

页数：11

共 65 条

[21] The Effect of Annealing in Controlled Vapor Pressure on the Thermoelectric Properties of RF-Sputtered Bi2Te3 Film [J].

Kim, Hyo-Jung ;

Yim, Ju-Hyuk ;

Choi, Won Chel ;

Park, Chan ;

Kim, Jin-Sang .

JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (06) :1519-1523

[22]

Kim J. Y., 2015, SCI REP, V5

[23] The influence of CNTs on the thermoelectric properties of a CNT/Bi2Te3 composite [J].

Kim, Kyung Tae ;

Choi, Si Young ;

Shin, Eun Hye ;

Moon, Kyong Seok ;

Koo, Hye Young ;

Lee, Gil-Geun ;

Ha, Gook Hyun .

CARBON, 2013, 52 :541-549

[24] Dense dislocation arrays embedded in grain boundaries for high-performance bulk thermoelectrics [J].

Kim, Sang Il ;

Lee, Kyu Hyoung ;

Mun, Hyeon A. ;

Kim, Hyun Sik ;

Hwang, Sung Woo ;

Roh, Jong Wook ;

Yang, Dae Jin ;

Shin, Weon Ho ;

Li, Xiang Shu ;

Lee, Young Hee ;

Snyder, G. Jeffrey ;

Kim, Sung Wng .

SCIENCE, 2015, 348 (6230) :109-114

[25] Phase Transformation of Alternately Layered Bi/Se Structures to Well-Ordered Single Crystalline Bi2Se3 Structures by a Self-Organized Ordering Process [J].

Kim, Tae-Hyeon ;

Baeck, Ju Heyuck ;

Choi, Hyejin ;

Jeong, Kwang-Ho ;

Cho, Mann-Ho ;

Kim, B. C. ;

Jeong, K. T. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (05) :3737-3746

[26] Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set [J].

Kresse, G ;

Furthmuller, J .

PHYSICAL REVIEW B, 1996, 54 (16) :11169-11186

[27] From ultrasoft pseudopotentials to the projector augmented-wave method [J].

Kresse, G ;

Joubert, D .

PHYSICAL REVIEW B, 1999, 59 (03) :1758-1775

[28] Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set [J].

Kresse, G ;

Furthmuller, J .

COMPUTATIONAL MATERIALS SCIENCE, 1996, 6 (01) :15-50

[29] Determining the Thermal Conductivity of Nanocrystalline Bismuth Telluride Thin Films Using the Differential 3ω Method While Accounting for Thermal Contact Resistance [J].

Kudo, S. ;

Hagino, H. ;

Tanaka, S. ;

Miyazaki, K. ;

Takashiri, M. .

JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (06) :2021-2025

[30] Effects of nanoscale porosity on thermoelectric properties of SiGe [J].

Lee, Hohyun ;

Vashaee, Daryoosh ;

Wang, D. Z. ;

Dresselhaus, Mildred S. ;

Ren, Z. F. ;

Chen, Gang .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (09)

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