The Ga-Ni-Sn (gallium-nickel-tin) system

被引:3
|
作者
Gupta, K. P. [1 ]
机构
[1] Indian Inst Met, Kolkata, W Bengal, India
关键词
Gallium;
D O I
10.1007/s11669-008-9346-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The Ga-Ni-Sn (gallium-nickel-tin) system were first critically assessed by Nash to develop into phase diagrams. The three binary systems Ga-Ni, Ga-Sn, and Ni-Sn have 10 binary intermediate phases. Four ternary intermediate phases have been reported to exist in the Ga-Ni-Sn ternary systems. The Ga-Ni-Sn system were prepared by melting 99.9 mass% pure component elements in evacuated and sealed quartz tubes, homogenized at 800°C. X -ray diffraction was used for phase identification, phase analysis, and phase boundary delineation. The phase equilibria established in the Ga-Ni-Sn system at 650°C shows the existence of several three-phase equilibrium regions.
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页码:374 / 377
页数:4
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