Amorphization in silicon by electron irradiation

被引：54

作者：

Takeda, S ^{[1
]}

Yamasaki, J ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, Japan

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.83.320

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have found that amorphization is induced in crystalline silicon under MeV electron irradiation at low temperatures of about 25 K. The amorphization process has been observed at 25 K by means of in situ transmission electron microscopy and diffraction. The dose of 2 MeV electrons needed for amorphization is smaller than 7.5 x 10(22) cm(-2) at 25 K, which corresponds to 5.0 displacements per atom. The threshold electron energy for amorphization at 25 K is about 1 MeV. We discuss the mechanism of amorphization in Si based on the experimental finding.

引用

页码：320 / 323

页数：4

共 29 条

[1] Self-interstitial clustering in crystalline silicon [J].

Arai, N ;

Takeda, S ;

Kohyama, M .

PHYSICAL REVIEW LETTERS, 1997, 78 (22) :4265-4268

[2] RECRYSTALLIZATION OF A PLANAR AMORPHOUS-CRYSTALLINE INTERFACE IN SILICON BY LOW-ENERGY RECOILS - A MOLECULAR-DYNAMICS STUDY [J].

CATURLA, MJ ;

DELARUBIA, TD ;

GILMER, GH .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) :3121-3125

[3]

Chadderton L. T., 1971, Radiation Effects, V8, P77, DOI 10.1080/00337577108231012

[4] MAGIC NUMBERS FOR VACANCY AGGREGATION IN CRYSTALLINE SI [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW B, 1988, 38 (02) :1523-1525

[5] AMORPHIZATION AND CONDUCTIVITY OF SILICON AND GERMANIUM INDUCED BY INDENTATION [J].

CLARKE, DR ;

KROLL, MC ;

KIRCHNER, PD ;

COOK, RF ;

HOCKEY, BJ .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2156-2159

[6] ION-INDUCED DEFECTS IN SEMICONDUCTORS [J].

CORBETT, JW ;

KARINS, JP ;

TAN, TY .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :457-476

[7] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J].

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1965, 138 (2A) :A555-&

[8] TRANSITIONS TO DEFECTIVE CRYSTAL AND THE AMORPHOUS STATE INDUCED IN ELEMENTAL SI BY LASER QUENCHING [J].

CULLIS, AG ;

WEBBER, HC ;

CHEW, NG ;

POATE, JM ;

BAERI, P .

PHYSICAL REVIEW LETTERS, 1982, 49 (03) :219-222

[9] EPITAXIAL-GROWTH VERSUS NUCLEATION IN AMORPHOUS SI DOPED WITH CU AND AG [J].

CUSTER, JS ;

THOMPSON, MO ;

EAGLESHAM, DJ ;

JACOBSON, DC ;

POATE, JM .

JOURNAL OF MATERIALS RESEARCH, 1993, 8 (04) :820-829

[10] STRUCTURAL CHARACTERIZATION OF DAMAGE IN SI(100) PRODUCED BY MEV SI+ ION-IMPLANTATION AND ANNEALING [J].

ELGHOR, MK ;

HOLLAND, OW ;

WHITE, CW ;

PENNYCOOK, SJ .

JOURNAL OF MATERIALS RESEARCH, 1990, 5 (02) :352-359

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