Ambient dependent photoconductivity in Mg x Zn1-x O thin films

被引:10
作者
Ghosh, R. [1 ]
Mridha, S. [1 ]
Basak, D. [1 ]
机构
[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, India
关键词
ZNO; MGXZN1-XO;
D O I
10.1007/s10854-008-9627-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Mg (x) Zn1-x O (x = 0.0-0.08) thin films have been deposited on glass substrate by sol-gel technique and photoconductivity of the thin films have been investigated in vacuum, hydrogen, oxygen and air. Photoresponse spectra show that both ZnO and substituted films are ultraviolet light sensitive and the sensitivity shifts towards the shorter wavelength side with increasing x. The photo-to-dark current ratio (I (ph)/I (d)) and decay times are influenced by different ambient such as vacuum, hydrogen, and air for all the substituted films. I (ph)/I (d) for the substituted films increases first attaining a maximum value for x = 0.05 and then decreases for vacuum and hydrogen, while, an increase in the value is observed incase of oxygen as x increases. The change is not significant in air. The value of photo to dark current ratio for the films with x = 0.05 and 0.08 is as high as four orders of magnitude in both vacuum and hydrogen ambient. This change in the photo to dark current ratio is correlated with the grain boundaries, hence, the grain size of the films. In vacuum, hydrogen and oxygen, though a large increase in the photocurrent is caused, both growth and decay process becomes slower in these ambient.
引用
收藏
页码:371 / 375
页数:5
相关论文
共 15 条
[1]   Photoresponse of sol-gel-synthesized ZnO nanorods [J].
Ahn, SE ;
Lee, JS ;
Kim, H ;
Kim, S ;
Kang, BH ;
Kim, KH ;
Kim, GT .
APPLIED PHYSICS LETTERS, 2004, 84 (24) :5022-5024
[2]  
[Anonymous], 1978, SEL POWD DIFFR DAT M, V1, P108
[3]   CONVERSION OF CHEMICALLY DEPOSITED ZNS FILMS TO PHOTOCONDUCTING ZNO FILMS [J].
FERNANDEZ, AM ;
SEBASTIAN, PJ .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (11) :2001-2005
[4]   Tunable visible photoluminescence from ZnO thin films through Mg-doping and annealing [J].
Fujihara, S ;
Ogawa, Y ;
Kasai, A .
CHEMISTRY OF MATERIALS, 2004, 16 (15) :2965-2968
[5]   Composition dependence of electrical and optical properties in sol-gel MgxZn1-xO thin films [J].
Ghosh, R. ;
Basak, D. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (02)
[6]   Optical studies on MgxZn1-xO wide band gap semiconductor in the perspective of phase equilibrium [J].
Ghosh, R. ;
Basak, D. .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2007, 18 (Suppl 1) :S141-S144
[7]   Photoluminescence and photoconductance in annealed ZnO thin films [J].
Ghosh, R ;
Mallik, B ;
Fujihara, S ;
Basak, D .
CHEMICAL PHYSICS LETTERS, 2005, 403 (4-6) :415-419
[8]   Composition dependent ultraviolet photoresponse in MgxZn1-xO thin films [J].
Ghosh, R. ;
Basak, D. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (11)
[9]  
KIM S, 2003, ELECTROCHEM SOLID J, V6, P7
[10]   First-principles study of native point defects in ZnO [J].
Kohan, AF ;
Ceder, G ;
Morgan, D ;
Van de Walle, CG .
PHYSICAL REVIEW B, 2000, 61 (22) :15019-15027