RBS/channeling studies of swift heavy ion irradiated InGaAs/GaAs heterostructures

被引：9
作者：
Dhamodaran, S
Sathish, N
Pathak, AP [1 ]
Khan, SA
Avasthi, DK
Srinivasan, T
Muralidharan, R
Sundaravel, B
Nair, KGM
机构：
[1] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India
[2] UAM Iztapalapa, Dept Fis, Mexico City 09340, DF, Mexico
[3] Nucl Sci Ctr, New Delhi 110067, India
[4] Solid State Phys Lab, Delhi 110054, India
[5] Indira Gandhi Ctr Atom Res, Mat Sci Div, Kalpakkam 603102, Tamil Nadu, India
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 244卷 / 01期
关键词：
strain relaxation; dislocations; dechanneling; swift heavy ions;
D O I：
10.1016/j.nimb.2005.11.027
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In0.18Ga0.82As/GaAs heterostructures of various layer thicknesses grown by molecular beam epitaxy (MBE) were irradiated by silver ions with a fixed energy and fluence. The thicknesses of the layers were beyond critical thickness and expected to be partially strain relaxed. The defects generated by partial strain relaxation and the effects of irradiation on these defects have been characterized by RBS/channeling. The dechanneling parameter and its dependence on incident ion energy has been determined. The resulting E-0.5 dependence of the dechanneling parameter has been attributed to the presence of misfit dislocations at the interface. The effect of swift heavy ion (SHI) irradiation on partial relaxations is discussed in detail. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：174 / 178
页数：5
相关论文
共 34 条
[1]   DISLOCATION BEHAVIOR IN INGAAS STEP-GRADED AND ALTERNATING STEP-GRADED STRUCTURES - DESIGN RULES FOR BUFFER FABRICATION [J].
ARAUJO, D ;
GONZALEZ, D ;
GARCIA, R ;
SACEDON, A ;
CALLEJA, E .
APPLIED PHYSICS LETTERS, 1995, 67 (24) :3632-3634
[2]   Study of defects and strain relaxation in GaAs/InxGa1-xAs/GaAs heterostructures using photoluminescence, positron annihilation, and x-ray diffraction [J].
Arora, BM ;
Chandrasekaran, KS ;
Gokhale, MR ;
Nair, G ;
Rao, GV ;
Amarendra, G ;
Viswanathan, B .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (12) :8444-8450
[3]   On-line study of ion beam induced mixing at interface by swift heavy ions [J].
Avasthi, DK ;
Assmann, W ;
Nolte, H ;
Mieskes, HD ;
Huber, H ;
Subramaniyam, ET ;
Tripathi, A ;
Ghosh, S .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 156 (1-4) :143-147
[4]   Atomic mixing in thin film systems by swift heavy ions [J].
Bolse, W ;
Schattat, B .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 190 :173-176
[5]   Bandgap tuning of semiconductor Quantum Well laser structures using high energy ion implantation [J].
Charbonneau, S ;
Poole, PJ ;
Piva, PG ;
Buchanan, M ;
Goldberg, RD ;
Mitchell, IV .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 106 (1-4) :457-460
[6]   QUANTUM-WELL INTERMIXING FOR OPTOELECTRONIC INTEGRATION USING HIGH-ENERGY ION-IMPLANTATION [J].
CHARBONNEAU, S ;
POOLE, PJ ;
PIVA, PG ;
AERS, GC ;
KOTELES, ES ;
FALLAHI, M ;
HE, JJ ;
MCCAFFREY, JP ;
BUCHANAN, M ;
DION, M ;
GOLDBERG, RD ;
MITCHELL, IV .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) :3697-3705
[7]  
DHAMODARAN S, UNPUB
[8]   ON THE MECHANISMS OF STRAIN RELEASE IN MOLECULAR-BEAM-EPITAXY-GROWN INXGA1-XAS/GAAS SINGLE HETEROSTRUCTURES [J].
DRIGO, AV ;
AYDINLI, A ;
CARNERA, A ;
GENOVA, F ;
RIGO, C ;
FERRARI, C ;
FRANZOSI, P ;
SALVIATI, G .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (05) :1975-1983
[9]  
Feldman L.C., 1982, MAT ANAL ION CHANNEL
[10]   ION-CHANNELING STUDIES OF INYGA1-YAS/GAAS STRAINED-LAYER SINGLE AND MULTIPLE-QUANTUM-WELL STRUCTURES [J].
FLEMIG, GW ;
BRENN, R ;
LARKINS, EC ;
BURKNER, S ;
BENDER, G ;
BAEUMLER, M ;
RALSTON, JD .
JOURNAL OF CRYSTAL GROWTH, 1994, 143 (1-2) :29-39
1234