Properties of IGZO thin films irradiated by electron beams with various energies

被引:7
作者
Jeong, So Hyun [1 ]
Bae, Byung Seong [1 ]
Yu, Kyeong Min [2 ]
Ryu, Min Ki [3 ]
Cho, Kyoung Ik [3 ]
Yun, Eui-Jung [1 ,4 ]
机构
[1] Hoseo Univ, Coll New IT Engn, Asan 336795, South Korea
[2] Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
[3] Elect & Telecommun Res Inst, Oxide Elect Res Team, Taejon 305350, South Korea
[4] Hoseo Univ, Dept Syst Control Engn, Asan 336795, South Korea
关键词
Indium-gallium-zinc oxide (IGZO) films; High-energy electron-beam irradiation (HEEBI); Radio-frequency (RF) magnetron sputtering; Photoluminescence; Hall measurements; X-ray photoelectron spectroscopy; ZNO FILMS; TRANSISTORS; PLASMA; O-2;
D O I
10.3938/jkps.61.867
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this study, we investigated the effects of the key parameters of high-energy electron-beam irradiation (HEEBI) on the optical, electrical, and structural properties of indium-gallium-zinc oxide (IGZO) films grown on glass substrates at room temperature by using radio-frequency magnetron sputtering techniques. Hall, photoluminescence, X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectroscopy measurements revealed that p-type conductivity might appear in films HEEBI-treated at high energy and dose, which was attributed to not only the formation of oxygen interstitial and zinc vacancy acceptor defects but also the reduction of hydrogen-related donor defects in the IGZO films due to HEEBI treatment. X-ray diffraction analyses showed an increase in the halo peak intensity at around 34A degrees with increasing electron-beam energy, indicating that all films prepared in this study were more crystallized at a higher energy despite their amorphous main structure.
引用
收藏
页码:867 / 872
页数:6
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