共 26 条
Properties of IGZO thin films irradiated by electron beams with various energies
被引:7
作者:

Jeong, So Hyun
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Hoseo Univ, Coll New IT Engn, Asan 336795, South Korea Hoseo Univ, Coll New IT Engn, Asan 336795, South Korea

Bae, Byung Seong
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Hoseo Univ, Coll New IT Engn, Asan 336795, South Korea Hoseo Univ, Coll New IT Engn, Asan 336795, South Korea

Yu, Kyeong Min
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机构:
Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea Hoseo Univ, Coll New IT Engn, Asan 336795, South Korea

Ryu, Min Ki
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机构:
Elect & Telecommun Res Inst, Oxide Elect Res Team, Taejon 305350, South Korea Hoseo Univ, Coll New IT Engn, Asan 336795, South Korea

Cho, Kyoung Ik
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h-index: 0
机构:
Elect & Telecommun Res Inst, Oxide Elect Res Team, Taejon 305350, South Korea Hoseo Univ, Coll New IT Engn, Asan 336795, South Korea

Yun, Eui-Jung
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机构:
Hoseo Univ, Coll New IT Engn, Asan 336795, South Korea
Hoseo Univ, Dept Syst Control Engn, Asan 336795, South Korea Hoseo Univ, Coll New IT Engn, Asan 336795, South Korea
机构:
[1] Hoseo Univ, Coll New IT Engn, Asan 336795, South Korea
[2] Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
[3] Elect & Telecommun Res Inst, Oxide Elect Res Team, Taejon 305350, South Korea
[4] Hoseo Univ, Dept Syst Control Engn, Asan 336795, South Korea
关键词:
Indium-gallium-zinc oxide (IGZO) films;
High-energy electron-beam irradiation (HEEBI);
Radio-frequency (RF) magnetron sputtering;
Photoluminescence;
Hall measurements;
X-ray photoelectron spectroscopy;
ZNO FILMS;
TRANSISTORS;
PLASMA;
O-2;
D O I:
10.3938/jkps.61.867
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
In this study, we investigated the effects of the key parameters of high-energy electron-beam irradiation (HEEBI) on the optical, electrical, and structural properties of indium-gallium-zinc oxide (IGZO) films grown on glass substrates at room temperature by using radio-frequency magnetron sputtering techniques. Hall, photoluminescence, X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectroscopy measurements revealed that p-type conductivity might appear in films HEEBI-treated at high energy and dose, which was attributed to not only the formation of oxygen interstitial and zinc vacancy acceptor defects but also the reduction of hydrogen-related donor defects in the IGZO films due to HEEBI treatment. X-ray diffraction analyses showed an increase in the halo peak intensity at around 34A degrees with increasing electron-beam energy, indicating that all films prepared in this study were more crystallized at a higher energy despite their amorphous main structure.
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页码:867 / 872
页数:6
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