An updated data compendium of enhanced low dose rate sensitive (ELDRS) bipolar linear circuits

被引：25

作者：

Pease, RL ^{[1
]}

McClure, S ^{[1
]}

Johnston, AH ^{[1
]}

Gorelick, J ^{[1
]}

Turflinger, TL ^{[1
]}

Gehlhausen, M ^{[1
]}

Krieg, J ^{[1
]}

Carriere, T ^{[1
]}

Shaneyfelt, M ^{[1
]}

机构：

[1] RLP Res, Albuquerque, NM 87122 USA

来源：

2001 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD | 2001年

关键词：

D O I：

10.1109/REDW.2001.960459

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 1996 total dose data compendium on ELDRS in bipolar linear circuits is updated. The new data include 37 data sets at high and low dose rate on 29 part types from nine manufacturers. A new table on elevated temperature irradiation has been added. References for each data set are provided.

引用

收藏

页码：127 / 133

页数：7

相关论文

共 18 条

[1] Attempt to define conservative conditions for total dose evaluation of bipolar ICs [J].

Bonora, L ;

David, JP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (06) :1974-1980

[2] Evaluation of accelerated total dose testing of linear bipolar circuits [J].

Carrière, T ;

Ecoffet, R ;

Poirot, P .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) :2350-2357

[3] Enhanced total dose damage in junction field effect transistors and related linear integrated circuits [J].

Flament, O ;

Autran, JL ;

Roche, P ;

Leray, JL ;

Musseau, O ;

Truche, R ;

Orsier, E .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (06) :3060-3067

[4] 1/f noise, hydrogen transport, and latent interface-trap buildup in irradiated MOS devices [J].

Fleetwood, DM ;

Johnson, MJ ;

Meisenheimer, TL ;

Winokur, PS ;

Warren, WL ;

Witczak, SC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (06) :1810-1817

[5] Study of low-dose-rate radiation effects on commercial linear bipolar ICs [J].

Freitag, RK ;

Brown, DB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (06) :2649-2658

[6]

JOHNSON DG, 1994, CHINA ECON REV, V4, P1

[7] Enhanced damage in bipolar devices at low dose rates: Effects at very low dose rates [J].

Johnston, AH ;

Lee, CI ;

Rax, BG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (06) :3049-3059

[8] Enhanced low dose rate sensitivity (ELDRS) in a voltage comparator which only utilizes complementary vertical NPN and PNP transistors [J].

Krieg, JF ;

Titus, JL ;

Emily, D ;

Gehlhausen, M ;

Swonger, J ;

Platteter, D .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (06) :1616-1619

[9] Comparison of total dose effects on micropower op-amps: Bipolar and CMOS [J].

Lee, CI ;

Johnston, AH .

1998 IEEE RADIATION EFFECTS DATA WORKSHOP, 1998, :132-136

[10]

MCCLURE S, 2000, IEEE RAD EFF DAT WOR