Iridium-silicide nanowires on Si(110) surface

被引：4

作者：

Mohottige, Rasika N. ^{[1
]}

Oncel, Nuri ^{[1
]}

机构：

[1] Univ N Dakota, Dept Phys & Astrophys, Grand Forks, ND 58202 USA

来源：

SURFACE SCIENCE | 2015年 / 641卷

关键词：

STM; STS; Silicon; 110; Nanowires; SCANNING-TUNNELING-MICROSCOPY; GROWTH; NM;

D O I：

10.1016/j.susc.2015.07.016

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We studied physical and electronic properties of iridium suicide nanowires grown on the Si(110) surface with the help of scanning tunneling microscopy and spectroscopy. The nanowires grow along the [001] direction with an average length of about 100 nm. They have a band gap of similar to 0.5 eV and their electronic properties show similarities with the iridium suicide ring clusters formed on Ir modified Si(111) surface. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：237 / 241

页数：5

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